A New High Pressure - Low Temperature Process for the Synthesis and the Crystal Growth of Gallium Nitride

Annaïg Denis (1) , Graziella Goglio (1) , Alain Largeteau (1) , Gérard Demazeau (1)

1 ICMCB - Institut de Chimie de la Matière Condensée de Bordeaux

Gallium nitride can be synthesized by a solvothermal route using ammonia as solvent and a nitriding additive (such as hydrazine hydrochloride NH 2 NH 3 Cl or sodium azide NaN 3 ) encapsulated in melt gallium as chemical reagents. The involved temperature and pressure are respectively 600 °C and 150 MPa. The synthesized products are then characterized by X-Ray Diffraction and Scanning Electron Microscopy. The synthesis parameters influence the powder morphology and purity.

Mots clés: Gallium Nitride; Ammonia solvent; Solvothermal synthesis; Supercritical conditions; High pressure

Domaines: Matériaux

Annaïg Denis, Graziella Goglio, Alain Largeteau, Gérard Demazeau. A New High Pressure - Low Temperature Process for the Synthesis and the Crystal Growth of Gallium Nitride. High Pressure Research, 2002, 22 (3-4), pp.585-588. ⟨10.1080/08957950212409⟩. ⟨hal-00715266⟩