Spin Hall effect at interfaces between HgTe/CdTe quantum wells and metals - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2011

Spin Hall effect at interfaces between HgTe/CdTe quantum wells and metals

Résumé

We study the spin-dependent transmission through interfaces between a HgTe/CdTe quantum well (QW) and a metal - both for the normal metal and the superconducting case. Interestingly, we discover a new type of spin Hall effect at these interfaces that happens to exist even in the absence of structure and bulk inversion asymmetry within each subsystem (i.e. the QW and the metal). Thus, this is a pure boundary spin Hall effect which can be directly related to the existence of exponentially localized edge states at the interface. We demonstrate how this effect can be measured and functionalized for an all-electric spin injection into normal metal leads.

Dates et versions

hal-00668331 , version 1 (09-02-2012)

Identifiants

Citer

M. Guigou, P. Recher, Jérôme Cayssol, B. Trauzettel. Spin Hall effect at interfaces between HgTe/CdTe quantum wells and metals. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 84 (9), pp.094534 (1-7). ⟨10.1103/PhysRevB.84.094534⟩. ⟨hal-00668331⟩

Collections

CNRS LOMA
45 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More