Reversible switching between p- and n-type conduction in the semiconductor Ag₁₀Te₄Br₃

Tom Nilges (1) , Stefan Lange (1) , Melanie Bawohl (1) , Jens Markus Deckwart (1) , Martin Janssen (1) , Hans-Dieter Wiemhöfer (1) , Rodolphe Decourt (2) , Bernard Chevalier (2) , Julia Vannahme (3) , Helmut Eckert (3) , Richard Weihrich (4)

1 Institut für Anorganische und Analytische Chemie
2 ICMCB - Institut de Chimie de la Matière Condensée de Bordeaux
3 Institut für Physikalische Chemie
4 Institut für Anorganische Chemie

Switching between n- and p-type conduction in a semiconductor can be done through doping. A fundamentally different behaviour has now been observed in Ag₁₀Te₄Br₃, as a transition from ionic to electronic conduction is achieved simply by heating, which could be used for switches or in novel electronic devices.

Domaines: Matériaux

Tom Nilges, Stefan Lange, Melanie Bawohl, Jens Markus Deckwart, Martin Janssen, et al.. Reversible switching between p- and n-type conduction in the semiconductor Ag₁₀Te₄Br₃. Nature Materials, 2009, 8 (2), pp.101-108. ⟨10.1038/nmat2358⟩. ⟨hal-00359233⟩