Nitrogen flow rate as a new key parameter for the nitridation of electrolyte thin films

Yohann Hamon (1) , Philippe Vinatier (1) , Efstratios I. Kamitsos (2) , Marc Dussauze (2) , Christos-Platon E. Varsamis (2) , D. Zielniok (3) , C. Roesser (3) , C. Roling

1 ICMCB - Institut de Chimie de la Matière Condensée de Bordeaux
2 Theoretical and Physical Chemistry Institute
3 Fachbereich Chemie

This work presents an investigation of the role of the nitrogen flow rate on the composition, structure and ionic conductivity of thin films prepared by reactive radio-frequency (rf) sputtering of lithium metaborate targets. It was found that sputtering at constant nitrogen pressure but with increasing nitrogen flow rate leads to thin films with significantly increased nitrogen content. The effect of nitridation on the borate network has been studied by infrared transmittance spectroscopy and revealed boron–nitrogen bonding in triangular arrangements of the glass network, followed by a parallel destruction of borate tetrahedral units. The ionic conductivity of thin films was also measured and found to increase with the nitrogen amount in the film.

Mots clés: Nitridation; Reactive sputtering; Solid electrolyte; Borate glasses

Domaines: Matériaux

Yohann Hamon, Philippe Vinatier, Efstratios I. Kamitsos, Marc Dussauze, Christos-Platon E. Varsamis, et al.. Nitrogen flow rate as a new key parameter for the nitridation of electrolyte thin films. Solid State Ionics, 2008, 179 (21-26), pp.1223-1226. ⟨10.1016/j.ssi.2008.04.005⟩. ⟨hal-00333154⟩