Structural and electrical properties of BaTi1−xZrxO3 sputtered thin films: effect of the sputtering conditions

Vincent Reymond (1) , Sandrine Payan (1) , Dominique Michau (1) , Jean-Pierre Manaud (1) , Mario Maglione (1)

1 ICMCB - Institut de Chimie de la Matière Condensée de Bordeaux

aTi1−xZrxO3 thin films have been prepared on Si and Pt/TiO2/SiO2/Si substrates by radio-frequency magnetron sputtering varying the deposition parameters, such as the chamber pressure, the substrate temperature and the gas composition. The films have been probed by X-ray Diffraction (XRD), Wavelength Dispersive Spectrometry (WDS), Scanning Electron Microscopy (SEM) and Rutherford Backscattering Spectrometry (RBS)...

Mots clés: Structural properties; Thin films; BaTi1−xZrxO3; Sputtering; Dielectric properties

Domaines: Matériaux

Vincent Reymond, Sandrine Payan, Dominique Michau, Jean-Pierre Manaud, Mario Maglione. Structural and electrical properties of BaTi1−xZrxO3 sputtered thin films: effect of the sputtering conditions. Thin Solid Films, 2004, 467 (1-2), pp.54-58. ⟨10.1016/j.tsf.2004.03.005⟩. ⟨hal-00159589⟩