Relaxor properties of sputtered Ba(Ti,Zr)O3 thin films

Vincent Reymond (1) , Olivier Bidault (1) , Dominique Michau (1) , Mario Maglione (1) , Sandrine Payan (1)

1 ICMCB - Institut de Chimie de la Matière Condensée de Bordeaux

Thin films of Ba(Ti,Zr)O3 containing about 65% Zr have been grown using rf magnetron sputtering with various substrate temperatures (500–700 °C). All of them display ferroelectric relaxor features at low temperature (T < 200 K), namely a frequency dependent maximum of the dielectric permittivity and dispersion on the low temperature side of the peak. This is the first time that such a behaviour has been evidenced in lead-free sputtered thin films.

Mots clés: Ferroelectric relaxor; Thin films; Inorganic compounds; Oxides; Titanium; Baryum; Zirconium

Domaines: Matériaux

Vincent Reymond, Olivier Bidault, Dominique Michau, Mario Maglione, Sandrine Payan. Relaxor properties of sputtered Ba(Ti,Zr)O3 thin films. Journal of Physics D: Applied Physics, 2006, vol. 39, n° 6, p. 1204-1210. ⟨10.1088/0022-3727/39/6/029⟩. ⟨hal-00078741⟩