ANALYSIS AND ORIGIN OF POINT DEFECTS IN SILICON AFTER LIQUID PHASE TRANSIENT ANNEALING

A. Mesli (1) , J. Muller (1) , P. Siffert (1)

1 IReS - Institut de Recherches Subatomiques

Works devoted to the study of point defects in pulsed laser annealed silicon are reviewed by means of electrical characterization. Tailing effects of the implanted distribution are responsible for the observed residual defects in the case of a layer amorphized by ion implantation. However, difficulty in annealing some kinds of point defects by reducing the duration of laser pulse have been shown using slightly disordered silicon. Finally, in the case of irradiated virgin silicon, a high level of point defects are created, which are essentially donor levels that introduce a compensating effect in P-type silicon.

Domains: Physics archives; Instrumentation and Detectors [physics.ins-det]

A. Mesli, J. Muller, P. Siffert. ANALYSIS AND ORIGIN OF POINT DEFECTS IN SILICON AFTER LIQUID PHASE TRANSIENT ANNEALING. Interactions Laser-Solides, Recuits par Faisceaux d'Energie / Laser-Solid Interactions and Transient Thermal Processing of Materials, 1983, Strasbourg, France. pp.C5-281-C5-295, ⟨10.1051/jphyscol:1983543⟩. ⟨jpa-00223129⟩