Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range
Résumé
We report on the epitaxial growth and photoluminescence of InAs 0.926 Sb 0.063 N 0.011 /InAs multi-quantum wells grown using plasma-assisted molecular beam epitaxy. These dilute nitride quantum wells exhibit bright photoluminescence in the midinfrared spectral range up to a temperature of 250 K without any post-growth annealing. Consideration of the power dependent photoluminescence behaviour are consistent with a type I band line-up in these quantum wells, arising from a strong lowering of the conduction band edge due to N-induced band anti-crossing effects.
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