MODIFICATION OF BAND-GAP IN SURFACE LAYER OF CDZNTE BY YAG :Nd+3 LASER RADIATION
Résumé
According to the effect, the interstitial atoms of Cd (Cdi) in Cd1-xZnxTe move along the temperature gradient while the Cd vacancies (VCd) and Zn atoms - in the opposite direction, into the bulk of the semiconductor where temperature is lower. Photoluminescence spectra studied at 5 K show that concentration of Cd atoms increases, but concentration of Zn atoms decreases at the surface due to redistribution atoms in temperature gradient of field. Formation of a graded band gap in Cd1- xZnxTe crystal at irradiation by the second harmonic of Nd :YAG laser is found.
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