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| HAL : hal-00202520, version 1 |
| Fiche détaillée |  Récupérer au format |
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| ENS 2007, Paris : France (2007) |
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| MODIFICATION OF BAND-GAP IN SURFACE LAYER OF CDZNTE BY YAG :Nd+3 LASER RADIATION |
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| Artur Medvid 1Aleksandr Mychko 1 |
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| (12/2007) |
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| According to the effect, the interstitial atoms of Cd (Cdi) in Cd1-xZnxTe move along the temperature gradient while the Cd vacancies (VCd) and Zn atoms - in the opposite direction, into the bulk of the semiconductor where temperature is lower. Photoluminescence spectra studied at 5 K show that concentration of Cd atoms increases, but concentration of Zn atoms decreases at the surface due to redistribution atoms in temperature gradient of field. Formation of a graded band gap in Cd1- xZnxTe crystal at irradiation by the second harmonic of Nd :YAG laser is found. |
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| 1 : | Riga Technical University |
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RTU |
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| 2 : | Institute of Semiconductor Physics NAS of Ukraine |
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NAS |
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| Domaine | : | Physique/Matière Condensée/Science des matériaux |
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| Liste des fichiers attachés à ce document : | |||||
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| hal-00202520, version 1 | |
| http://hal.archives-ouvertes.fr/hal-00202520 | |
| oai:hal.archives-ouvertes.fr:hal-00202520 | |
| Contributeur : EDA Publishing Association | |
| Soumis le : Lundi 7 Janvier 2008, 12:03:49 | |
| Dernière modification le : Lundi 7 Janvier 2008, 15:54:07 | |
