MODIFICATION OF BAND-GAP IN SURFACE LAYER OF CDZNTE BY YAG :Nd+3 LASER RADIATION

Artur Medvid (1) , Aleksandr Mychko (1) , L. Fedorenko (2) , B. Korbutjak (2) , S. Kryluk (2) , P. Onufrievs (1)

1 Riga Technical University
2 Institute of Semiconductor Physics NAS of Ukraine

According to the effect, the interstitial atoms of Cd (Cdi) in Cd1-xZnxTe move along the temperature gradient while the Cd vacancies (VCd) and Zn atoms - in the opposite direction, into the bulk of the semiconductor where temperature is lower. Photoluminescence spectra studied at 5 K show that concentration of Cd atoms increases, but concentration of Zn atoms decreases at the surface due to redistribution atoms in temperature gradient of field. Formation of a graded band gap in Cd1- xZnxTe crystal at irradiation by the second harmonic of Nd :YAG laser is found.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Artur Medvid, Aleksandr Mychko, L. Fedorenko, B. Korbutjak, S. Kryluk, et al.. MODIFICATION OF BAND-GAP IN SURFACE LAYER OF CDZNTE BY YAG :Nd+3 LASER RADIATION. ENS 2007, Dec 2007, Paris, France. pp.96-99. ⟨hal-00202520⟩