High resolution resonant photoluminescence excitation of CdSe/ZnS nanocrystals at low temperatures
Résumé
We present a new technique to perform high resolution resonant photoluminescence excitation of CdSe/ZnS nanocrystals. The method takes advantage of the long photoluminescence decay times (~ 1 Μs) observed in this system at liquid helium temperatures. Resonant photoluminescence excitation can be performed using a tunable pulsed excitation and a time-gated detection. Spectral hole burning investigations on an ensemble of CdSe/ZnS nanocrystals lead to homogeneous linewidths of ~100 µeV for the band edge exciton state.
Origine : Fichiers produits par l'(les) auteur(s)