Threshold Voltage Characteristics of Superconductor Gate nMOSFET at 4.2 K

I. Kurosawa , M. Maezawa , M. Aoyagi , H. Nakagawa , K. Yamamoto , S. Matsumoto

We propose a high mobility superconductor gate nMOSFET using undoped Si as the substrate. We have studied superconducting NbN gate nMOSFETs fabricated on p-type Si, undoped Si and n-type Si substrate, respectively. The nMOSFETs on undoped Si and n-type Si have operated properly at 4.2 K. The transconductance of nMOSFETs on undoped Si substrate is higher than that of nMOSFET on p-type Si. The difference in transconductance is attributed to the difference of impurity density in channels. The observed threshold voltages of NbN gate nMOSFETs on p-type Si, undoped Si and n-type Si have little difference at 4.2K.

Domaines: Articles anciens

I. Kurosawa, M. Maezawa, M. Aoyagi, H. Nakagawa, K. Yamamoto, et al.. Threshold Voltage Characteristics of Superconductor Gate nMOSFET at 4.2 K. Journal de Physique IV Proceedings, 1996, 06 (C3), pp.C3-73-C3-78. ⟨10.1051/jp4:1996311⟩. ⟨jpa-00254229⟩