Theoretical and Experimental Study of the Substrate Effect on the Fully Depleted SOI MOSFET at Low Temperatures

M. Pavanello , J. Martino , J.-P. Colinge

In this work is presented a theoretical and experimental analysis of the substrate potential drop and your influence on the fully depleted SOI MOSFET threshold voltage. This study is done at room temperature and at liquid nitrogen temperature. Good agreement was found between the simple model and experimental results.

Domaines: Articles anciens

M. Pavanello, J. Martino, J.-P. Colinge. Theoretical and Experimental Study of the Substrate Effect on the Fully Depleted SOI MOSFET at Low Temperatures. Journal de Physique IV Proceedings, 1996, 06 (C3), pp.C3-67-C3-72. ⟨10.1051/jp4:1996310⟩. ⟨jpa-00254228⟩