Preparation of YBCO on YSZ Layers Deposited on Silicon and Sapphire by MOCVD : Influence of the Intermediate Layer on the Quality of the Superconducting Film

G. Garcia , J. Casado , J. Llibre , M. Doudkowski , J. Santiso , A. Figueras , Sylvie Schamm-Chardon , Dominique Dorignac , Ch. Grigis , M. Aguilò

YSZ buffer layers were deposited on silicon and sapphire by MOCVD. The layers deposited on silicon were highly oriented along [100] direction without in-plane orientation, probably because the existence of the SiO2 amorphous interlayer. In contrast, epitaxial YSZ was obtained on (1-102) sapphire showing an inplane texture defined by the following relationships : (100) YSZ // (1-102) sapphire and (110) YSZ // (01-12) sapphire. Subsequently, YBCO films were deposited on YSZ by MOCVD. Structural, morphological and electrical characterization of the superconducting layers were correlated with the in-plane texture of the buffer layers.

Domaines: Articles anciens

G. Garcia, J. Casado, J. Llibre, M. Doudkowski, J. Santiso, et al.. Preparation of YBCO on YSZ Layers Deposited on Silicon and Sapphire by MOCVD : Influence of the Intermediate Layer on the Quality of the Superconducting Film. Journal de Physique IV Proceedings, 1995, 05 (C5), pp.C5-439-C5-447. ⟨10.1051/jphyscol:1995551⟩. ⟨jpa-00253913⟩