Atomic Layer Epitaxy Growth of AIN Thin Films

K.-E. Elers , M. Ritala , M. Leskelä , L.-S. Johansson

AIN thin films were grown by the Atomic Layer Epitaxy (ALE) technique employing AlCl3 and NH3 as precursors. A growth rate of 1.0 Å/cycle was obtained in experiments carried out at 500 °C. The films deposited onto soda lime glass substrates were polycrystalline exhibiting a strong preferred orientation in the [001] direction. X-ray Photoelectron Spectroscopy (XPS) measurements revealed that the films contained oxygen and chlorine as impurities.

Domaines: Articles anciens

K.-E. Elers, M. Ritala, M. Leskelä, L.-S. Johansson. Atomic Layer Epitaxy Growth of AIN Thin Films. Journal de Physique IV Proceedings, 1995, 05 (C5), pp.C5-1021-C5-1027. ⟨10.1051/jphyscol:19955120⟩. ⟨jpa-00253791⟩