Optical fundamental band-gap energy of semiconductors by photoacoustic spectroscopy

J. Caetano de Souza , A. Ferreira da Silva , H. Vargas

The optical band-gap energy of the semiconductors GaAs, CdSe, Cds, ZnSe and Si doped with P at a concentration of 4 x 1018cm-3, are obtained by photoacoustic spectroscopy technique. Excellent agreements are found with the values recorded in the literature.

Domaines: Articles anciens

J. Caetano de Souza, A. Ferreira da Silva, H. Vargas. Optical fundamental band-gap energy of semiconductors by photoacoustic spectroscopy. Journal de Physique IV Proceedings, 1994, 04 (C7), pp.C7-129-C7-132. ⟨10.1051/jp4:1994731⟩. ⟨jpa-00253259⟩