A 12 GHz oscillator based on a GaAs HEMT integrated to a HTS resonator

G. Borghs , J. Deboeck , I. Francois , D. Chambonnet , C. Belouet , Y. Crosnier , J. Carru , D. Chauvel , L. Arnaud , H. Boucher , J. Villegier , S. Nicoletti , L. Correra , J. Jiménez

A hybrid oscillator operating at 12 GHz and 77 K was designed and characterised. The design incorporated on a single substrate a passive superconductive circuit and a III-V active device. YBaCuO films (300nm), grown on MgO, had a surface resistance at 77 K of 0.3 mΩ scaled to 12 GHz. The DC and RF characteristics of the pseudomorphic HEMT showed minor differences before and after hybridation. The characterisation of a preliminary prototype oscillator including a superconducting resonator patterned on a MgO substrate, a gold matching network fabricated on Al2O3 and a transistor wire bonded gave a phase noise as low as - 75 dBc/Hz at 10 KHz.

Domaines: Articles anciens

G. Borghs, J. Deboeck, I. Francois, D. Chambonnet, C. Belouet, et al.. A 12 GHz oscillator based on a GaAs HEMT integrated to a HTS resonator. Journal de Physique IV Proceedings, 1994, 04 (C6), pp.C6-189-C6-194. ⟨10.1051/jp4:1994630⟩. ⟨jpa-00253125⟩