INFLUENCE OF H2 PARTIAL PRESSURE ON THE MORPHOLOGY AND CRYSTALLIZATION OF SiC LAYERS OBTAINED BY LPCVD USING TETRAMETHYLSILANE
Résumé
Silicon carbide layers have been produced by Chemical Vapor Deposition at low pressures (LPCVD) on graphite substrates from tetramethylsilane and hydrogen. The effects of change in partial pressure of hydrogen on the kinetics, morphology and structure of the layers have been examined. A model of the layer growth is developed.
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