Properties of Dislocations in HgCdTe Crystals

P. Renault , J-F. Barbot , P. Girault , A. Declemy , G. Rivaud , C. Blanchard

Dislocations in Hg1-xCdxTe (x≈0.2) single crystals have been introduced either by plastic deformation or by Al-implantation at high dose. Structural analysis of implanted samples, using Huang's method shows that dislocation loops are mainly of interstitial type with a radius of about 2.6 nm. Electrical properties of uniaxially deformed samples, using Hall effect, indicate the presence of both acceptor-like type dislocations along with donor-type point defects.

Domaines: Articles anciens

P. Renault, J-F. Barbot, P. Girault, A. Declemy, G. Rivaud, et al.. Properties of Dislocations in HgCdTe Crystals. Journal de Physique III, 1995, 5 (9), pp.1383-1389. ⟨10.1051/jp3:1995198⟩. ⟨jpa-00249388⟩