Hydrogenation of GaAs covered by GaAlAs and subgrain boundary passivation

A. Djemel , J. Castaing , Jacques Chevallier , P. Henoc

Cathodoluminescence (CL) has been performed to study the influence of hydrogen on electronic properties of GaAs with and without a GaAlAs layer. Recombination at sub-boundaries has been examined. These extended defects have been introduced by high temperature plastic deformation. The results show that they are passivated by hydrogen. The penetration of hydrogen is slowed down by the GaAlAs layer.

Domaines: Articles anciens

A. Djemel, J. Castaing, Jacques Chevallier, P. Henoc. Hydrogenation of GaAs covered by GaAlAs and subgrain boundary passivation. Journal de Physique III, 1992, 2 (12), pp.2301-2307. ⟨10.1051/jp3:1992247⟩. ⟨jpa-00248883⟩