Plasma depostion of BN, BCN:H and Me-BCN:H films using N-trimethylborazine (Me = Ti, Nb)

A. Weber , U. Bringmann , C. Klages , K. Taube , G. Döllein , H. Meyer , G. Weidenbach

N-Trimethylborazine has been used as precursor to deposit BN, BCN:H and metal-containing BCN:H films by means of plasma CVD processes. Depending on the plasma process and the gas mixture, films with various element compositions and mechanical properties were obtained. 
Carbon-free BN coatings formed at substrate temperatures of about 600°C in an ECR plasma CVD process, if ammonia was fed through the resonance zone. With Ar, on the other hand, colourless hard BCN:H coatings were obtained at comparably low temperatures of 100 to 150°C. 
Brownish BCN:H plasma polymer films were deposited from rf glow discharges using N-trimethylborazine/Ar mixtures. The formation of metal-containing BCN:H films with refractory metal carbide or nitride clusters in a BCN-network was achieved by a combination of rf sputtering from Ti or Nb targets and plasma CVD from the precursor/Ar mixture.
Results of EPMA, IR, nanometer indentation, XPS and X-ray diffraction measurements are reported.

Domaines: Articles anciens

A. Weber, U. Bringmann, C. Klages, K. Taube, G. Döllein, et al.. Plasma depostion of BN, BCN:H and Me-BCN:H films using N-trimethylborazine (Me = Ti, Nb). Journal de Physique III, 1992, 2 (8), pp.1391-1398. ⟨10.1051/jp3:1992184⟩. ⟨jpa-00248810⟩