DX centers in AlAs and GaAs-AlAs selectively doped superlattices

S. Ababou , J. Marchand , L. Mayet , G. Guillot , F. Mollot

DX centers have been investigated using deep level transient spectroscopy (DLTS) in Si doped AlAs and in selectively doped GaAs-AlAs superlattices (SLs) grown by molecular beam epitaxy. The activation energy for thermal emission is Ea = 0.42 eV in both the SLs and AlAs layers. For the first time a study of the capture in a SL reveals a capture activation energy Ecap = 0.36 cV, which locates the DX at Et≈60 meV below the conduction miniband. Taking into account the measured energies and trap concentrations, we show that the DX observed in the SLs lies in the AlAs layers.

Domaines: Articles anciens

S. Ababou, J. Marchand, L. Mayet, G. Guillot, F. Mollot. DX centers in AlAs and GaAs-AlAs selectively doped superlattices. Journal de Physique III, 1991, 1 (7), pp.1301-1309. ⟨10.1051/jp3:1991190⟩. ⟨jpa-00248658⟩