Dislocations and plasticity in semiconductors. I — Dislocation structures and dynamics

A. George , J. Rabier

Dislocation core structures in elemental semiconductors (ESC) and III-V compound semiconductors (CSC) with zinc blende structure are discussed in relation to their analogy with fcc metals. Emphasis is also put on the specific features of dislocations in SC at temperatures lower than 0,6 Tm when dislocation glide is controlled by the Peierls mechanism reflecting the strong covalent bonding of the atoms. Dislocation dynamics relevant to classical metallurgical effects or to specific effects associated with electronic levels introduced by dislocations in the band gap are reviewed. Analogies and differences between dislocation structures and properties in ESC and CSC are also discussed.

Mots clés: dislocation structure; slip; dislocation core structures; dislocation dynamics; III V semiconductors; f.c.c. metals; plasticity; elemental semiconductors; zinc blende structure; dislocation glide; Peierls mechanism; electronic levels; band gap

Domaines: Articles anciens

A. George, J. Rabier. Dislocations and plasticity in semiconductors. I — Dislocation structures and dynamics. Revue de Physique Appliquée, 1987, 22 (9), pp.941-966. ⟨10.1051/rphysap:01987002209094100⟩. ⟨jpa-00245655⟩