Silicon wafers for integrated circuit process

B. Leroy

Silicon as a substrate material will continue to dominate the market of integrated circuits for many years. We first review how crystal pulling procedures impact the quality of silicon. We then investigate how thermal treatments affect the behaviour of oxygen and carbon, and how, as a result, the quality of silicon wafers evolves. Gettering techniques are then presented. We conclude by detailing the requirements that wafers must satisfy at the incoming inspection.

Mots clés: crystal growth; elemental semiconductors; integrated circuit manufacture; reviews; semiconductor growth; silicon; integrated circuit process; substrate material; crystal pulling procedures; quality; thermal treatments

Domaines: Articles anciens

B. Leroy. Silicon wafers for integrated circuit process. Revue de Physique Appliquée, 1986, 21 (8), pp.467-488. ⟨10.1051/rphysap:01986002108046700⟩. ⟨jpa-00245465⟩