New ways to measure the work function difference in MOS structures

S.K. Krawczyk , H.M. Przewłocki , A. Jakubowski

Two new techniques for contact potential difference determination in MOS structures have been developed. These techniques were applied in practice yielding ΦMS values remaining in close agreement with each other, and within the range of ΦMS values obtained by other authors. These techniques are simple and much easier in application then the commonly used methods of ΦMS determination.

Mots clés: metal insulator semiconductor structures; work function; measure; work function difference; MOS structures; contact potential difference

Domaines: Articles anciens

S.K. Krawczyk, H.M. Przewłocki, A. Jakubowski. New ways to measure the work function difference in MOS structures. Revue de Physique Appliquée, 1982, 17 (8), pp.473-480. ⟨10.1051/rphysap:01982001708047300⟩. ⟨jpa-00245024⟩