A complete dry etching process for MOS FET's with submicron gate length

P. Parrens , E. Raffat , P. Jeuch

An anisotropic dry etching process for submicrometer silicon gate N channel MOS technology has been developed. Reactive ion etching was used for Si 3N4, polysilicon and phosphosilicate glass (PSG). Aluminum was plasma etched. The process includes tapered etching of contact holes in PSG and planarization of PSG to improve step coverage of metallization and to facilitate aluminum etching. MOS devices with gate length as small as 0.6 μm have been successfully fabricated with this process.

Mots clés: field effect integrated circuits; insulated gate field effect transistors; integrated circuit technology; sputter etching; FET; Si gate; poly Si; plasma etched Al; reactive ion etching; dry etching process; submicron gate length; N channel MOS technology; Si sub 3 N sub 4; phosphosilicate glass; contact holes; metallization

Domaines: Articles anciens

P. Parrens, E. Raffat, P. Jeuch. A complete dry etching process for MOS FET's with submicron gate length. Revue de Physique Appliquée, 1982, 17 (6), pp.383-388. ⟨10.1051/rphysap:01982001706038300⟩. ⟨jpa-00245010⟩