Electron and hole capture cross-sections at deep centers in gallium arsenide

A. Mitonneau , A. Mircea , G.M. Martin , D. Pons

A method is presented, which combines optical excitation and electrical refilling of deep levels, allowing one to measure the majority carrier capture cross-section for minority carrier traps : e.g., σn for a hole trap in n-type material. This method has been used to characterize many deep levels in gallium arsenide. The following results are obtained : the main electron trap « EL 2 » is not a hole lifetime killer; the temperature coefficient of the ionization energy for several levels, including the Cr level used for compensation in semi-insulating crystals ; very large (10-15 cm 2 or more), and very small (10-21 cm2) electron capture cross-sections for two of the levels ; possible capture mechanisms for these last cases are mentioned.

Mots clés: deep levels; electron traps; gallium arsenide; hole traps; III V semiconductors; minority carriers; deep centers; optical excitation; electrical refilling; minority carrier traps; GaAs; hole capture cross sections; electron capture cross sections

Domaines: Articles anciens

A. Mitonneau, A. Mircea, G.M. Martin, D. Pons. Electron and hole capture cross-sections at deep centers in gallium arsenide. Revue de Physique Appliquée, 1979, 14 (10), pp.853-861. ⟨10.1051/rphysap:019790014010085300⟩. ⟨jpa-00244672⟩