Growth of CuInS2 and its characterization

H.L. Hwang , C.Y. Sun , C.Y. Leu , C.L. Cheng , C.C. Tu

Novel methods for the material synthesis, crystal growth and film preparation of CuInS2 were developed, some of their properties were characterized. CuInS2 single crystals were grown by iodine vapour transport. The habit-planes were determined to be (112) and (110). The lattice parameters were determined to be a = 5.517 Å, c = 11.122 Å (tetragonal). The as-grown crystals were n-type with resistivities in the order of 106 Ω-cm. Eight lattice vibration modes were characterized by Raman Scattering. Single phase CuInS2 thin films were prepaed by RF sputtering The as-deposited films were p-type with resistivities in the range of 10-1 to 101 Ω-cm. Back scattering was used for the film analysis. The feasibility of using flash evaporation to deposit single phase CuInS2 films has also been studied.

Mots clés: copper compounds; crystal growth from vapour; electrical conductivity of crystalline semiconductors and insulators; electronic conduction in crystalline semiconductor thin films; lattice constants; molecular vibration in solids; particle backscattering; radiofrequency sputtering; Raman spectra of inorganic solids; semiconductor growth; ternary semiconductors; vapour deposition; crystal growth; CuInS sub 2; lattice parameters; lattice vibration modes; RF sputtering; flash evaporation; ternary semiconductor; thin film growth; I sub 2 vapour transport; habit planes; electrical resistivity; Raman scattering; back scattering

Domaines: Articles anciens

H.L. Hwang, C.Y. Sun, C.Y. Leu, C.L. Cheng, C.C. Tu. Growth of CuInS2 and its characterization. Revue de Physique Appliquée, 1978, 13 (12), pp.745-751. ⟨10.1051/rphysap:019780013012074500⟩. ⟨jpa-00244539⟩