Elastic constants of the layer compound GaS

A. Polian , M. Grimsditch , M. Fischer , M. Gatulle

The elastic constants of the layer semiconductor GaS were measured using Brillouin scattering, inelastic neutron scattering and ultrasonic techniques. The values obtained by these methods agree well with each other, but disagree with previous published values. From our values, the linear compressibilities are deduced and are shown to fit with the published experimental values. The calculation of the compressibilities using published elastic constants is also done for the related compounds GaSe and InSe. Our values of the compressibilities of GaSe are shown to be more reliable than the previous determination.

Mots clés: Brillouin spectra; compressibility; elastic constants; gallium compounds; II VI semiconductors; III VI semiconductors; indium compounds; neutron diffraction examination of materials; layer compound; GaS; layer semiconductor; Brillouin scattering; inelastic neutron scattering; ultrasonic techniques; linear compressibilities; InSe; GaSe

Domaines: Articles anciens

A. Polian, M. Grimsditch, M. Fischer, M. Gatulle. Elastic constants of the layer compound GaS. Journal de Physique Lettres, 1982, 43 (11), pp.405-409. ⟨10.1051/jphyslet:019820043011040500⟩. ⟨jpa-00232068⟩