BEAM INDUCED VARIATIONS OF GaAs CATHODOLUMINESCENCE : EFFECT OF HYDROGEN AND DEFORMATION
Résumé
We use cathodoluminescence (CL) in a scanning electron microscope to study deep level recombination in semi-insulating GaAs. Two kinds of specimens were examined (i) as-grown crystals before and after hydrogenation, (ii) crystals deformed at high temperatures before and after hydrogenation. Hydrogen is introduced into the crystal using a R.F. hydrogen plasma (T = 240°C, t = 90 min.). A consequence of the introduction of hydrogen is a substantial increase of the light emitted under the electron beam, due to a passivation of deep level centers
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