A MOBILITY MODEL FOR MOSFET DEVICE DIMULATION

A. Walker , P. Woerlee

The device characteristics of sub-micron MOS transistors depend strongly on the mobility of the charge carriers in the inversion layer. A new low lateral field mobility model for the normal field dependence will be presented. Good agreement was found between the predicted and measured mobilities for a large variety of samples. The model was successfully incorporated into a two - dimensional device simulation program which gave predictions agreeing well with experimental data.

Domaines: Articles anciens

A. Walker, P. Woerlee. A MOBILITY MODEL FOR MOSFET DEVICE DIMULATION. Journal de Physique Colloques, 1988, 49 (C4), pp.C4-265-C4-268. ⟨10.1051/jphyscol:1988455⟩. ⟨jpa-00227953⟩