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A NEW METHOD FOR THE EXTRACTION OF MOSFET PARAMETERS AT AMBIENT AND LIQUID HELIUM TEMPERATURES

Abstract : An original method for MOSFET parameter extraction is presented as a function of temperature. This method, which relies on combining drain current and transconductance transfer characteristics, enables reliable values of the threshold voltage and mobility parameters.
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https://hal.archives-ouvertes.fr/jpa-00227914
Contributor : Archives Journal de Physique <>
Submitted on : Friday, January 1, 1988 - 8:00:00 AM
Last modification on : Thursday, February 7, 2019 - 4:38:07 PM
Long-term archiving on: : Friday, April 30, 2010 - 7:04:07 PM

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ajp-jphyscol198849C4172.pdf
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F. Balestra, L. Hafez, G. Ghibaudo. A NEW METHOD FOR THE EXTRACTION OF MOSFET PARAMETERS AT AMBIENT AND LIQUID HELIUM TEMPERATURES. Journal de Physique Colloques, 1988, 49 (C4), pp.C4-817-C4-820. ⟨10.1051/jphyscol:19884172⟩. ⟨jpa-00227914⟩

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