POWER MOS FET MODELS FOR "SWITCHING" CIRCUITS

P. Rossel , R. Maimouni , M. Belabadia , Henri Tranduc , C. Cordonnier , M. Bairanzade

A compact model of the Power VDMOS Transistor compatible with the circuit simulator "SPICE2" is described in this article. This model is applied to the simulation of switching circuit with resistive and inductive loads ; comparisons with experimental results are presented.

Domaines: Articles anciens

P. Rossel, R. Maimouni, M. Belabadia, Henri Tranduc, C. Cordonnier, et al.. POWER MOS FET MODELS FOR "SWITCHING" CIRCUITS. Journal de Physique Colloques, 1988, 49 (C4), pp.C4-621-C4-624. ⟨10.1051/jphyscol:19884129⟩. ⟨jpa-00227865⟩