ELECTRONIC PROPERTIES OF SILICON INTERFACES PREPARED BY DIRECT BONDING

S. Bengtsson , O. Engström

The influence of interface charges on the properties of Si-Si and Si-SiO2 interfaces prepared by direct bonding has been investigated. Surface potentials of N-N and P-P interfaces and recombination currents in P-N junctions depend on surface and heat treatments. In both cases lower magnitudes were measured in samples pre-treated in HF compared to samples pre-treated in HNO3. Bonded Si-SiO2 interfaces with interface state densities of about 1011 cm-2 eV-1 and low flatband voltages have been achieved.

Domaines: Articles anciens

S. Bengtsson, O. Engström. ELECTRONIC PROPERTIES OF SILICON INTERFACES PREPARED BY DIRECT BONDING. Journal de Physique Colloques, 1988, 49 (C4), pp.C4-63-C4-66. ⟨10.1051/jphyscol:1988412⟩. ⟨jpa-00227855⟩