HIGH QUALITY SELECTIVE CONTACTS TO n-i-p-i DOPING SUPERLATTICES

G. Hasnain , C. Chang-Hasnain , G. Döhler , N. Johnson , D. Mars , J. Miller , J. Whinnery

Using a shadow-mask MBE technique for the fabrication of n-i-p-i doping superlattices with in situ grown-in selective n- and p- type contacts we have made a break-through with respect to the technical problem of selectively contacting the n- and p- layers in highly doped n-i-p-i superlattices. We report a number of investigations which could be performed successfully for the first time due to our new technique. Tunable room temperature electroluminescence with an external quantum efficiency of about 2 % was observed over a photon energy range corresponding to the half band gap of GaAs. In electroabsorption experiments the modulation of optical transmision through a n-i-p-i crystal was observed for the first time. In a n-i-p-i of only 2µm thickness a 22 % transmission change close to the bulk band gap was found. At photon wave lengths of about 1µm the absorption coefficient could be changed by 2 1/2 orders of magnitude by applying bias between -1.5 and +0.5 volts.

Domaines: Articles anciens

G. Hasnain, C. Chang-Hasnain, G. Döhler, N. Johnson, D. Mars, et al.. HIGH QUALITY SELECTIVE CONTACTS TO n-i-p-i DOPING SUPERLATTICES. Journal de Physique Colloques, 1987, 48 (C5), pp.C5-605-C5-609. ⟨10.1051/jphyscol:19875130⟩. ⟨jpa-00226715⟩