ATOMIC STRUCTURE OF <011> AND <001> PURE TILT GRAIN BOUNDARIES IN GERMANIUM AND SILICON

A. Bourret

High Resolution Electron Microscopy (HREM) has been used to investigate the structure of [001] and [011] pure tilt grain boundaries both nearcoincident and coincident in silicon and germanium crystals. The point-to-point resolution limit of this technique, limit the detection of the exact number of atoms and their location in the grain boundary plane. Several structural units for primary and secondary relaxations have been found. For the first time, a detailed comparison between experimental and simulated images of Σ = 9 has been performed. Recently HREM has been used in conjonction with electron diffraction to solve the {112} Σ = 3 atomic structure by Papon and Petit. These authors have proposed a new structure with reconstructed bonds.

Domaines: Articles anciens

A. Bourret. ATOMIC STRUCTURE OF <011> AND <001> PURE TILT GRAIN BOUNDARIES IN GERMANIUM AND SILICON. Journal de Physique Colloques, 1985, 46 (C4), pp.C4-27-C4-38. ⟨10.1051/jphyscol:1985402⟩. ⟨jpa-00224645⟩