RAMAN PROBING OF PHONONS AND INTERFACES IN SEMICONDUCTOR SUPERLATTICES
Résumé
Raman measurements on a large number of GaAs-AlxGa1-xAs superlattices are presented. The observed frequencies are in agreement with the model of a layered elastic continuum. A continuum model for the Raman intensities seems valid for the case of nonresonant excitation.
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Articles anciens
Origine : Accord explicite pour ce dépôt
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