A SIMPLIFIED TECHNIQUE FOR MOCVD OF III-V COMPOUNDS

Avhishek Chatterjee , M. Faktor , R. Moss , E. White

The use of Lewis acid-base adducts as MOCVD precursors for III-V compounds is described and in particular the use of InMe3.PEt3 for the growth of InP. A simple, small-scale apparatus, which utilises the safety and handleability of these adducts is described. The InP epitaxial layers obtained were of good crystallographic quality with background carrier concentrations down to 2 x 1015 cm-3. The relative advantages of adducts over conventional metal alkyls is discussed, as well as the ideal requirements of metallo-organic sources for MOCVD. The future potential of both the simplified growth system and the adducts is considered.

Domaines: Articles anciens

Avhishek Chatterjee, M. Faktor, R. Moss, E. White. A SIMPLIFIED TECHNIQUE FOR MOCVD OF III-V COMPOUNDS. Journal de Physique Colloques, 1982, 43 (C5), pp.C5-491-C5-503. ⟨10.1051/jphyscol:1982560⟩. ⟨jpa-00222280⟩