CHARGED GRAIN-BOUNDARIES IN n-Ge BICRYSTALS

X. Wu , V. Szkielko , P. Haasen

Germanium bicrystals with two types of low-energy symmetric tilt boundaries, Σ 9 and Σ 11 (CSL model classification) were grown. Current-voltage characteristics of grain-boundaries were measured in the temperature range 77 K ÷ 420 K. Potential barriers were found only at Σ 11 boundaries in n Ge which confirms the theoretical predictions of the atomic structure of these boundaries [1]. From the experimental data the conclusion is drawn that the electronic charge of Σ 11 boundaries is captured at the lattice defect with the energy level of about 0.2 eV above the top of the valence band.

Domaines: Articles anciens

X. Wu, V. Szkielko, P. Haasen. CHARGED GRAIN-BOUNDARIES IN n-Ge BICRYSTALS. Journal de Physique Colloques, 1982, 43 (C1), pp.C1-135-C1-139. ⟨10.1051/jphyscol:1982119⟩. ⟨jpa-00221775⟩