TEM AND EBIC INVESTIGATIONS OF POLYCRYSTALLINE SILICON SHEETS GROWN BY THE RAD GROWTH PROCESS

R. Sharko , A. Gervais , C. Texier-Hervo

This article reports on results of observations by transmission electron microscopy (TEM) of electrically active (and inactive) grain boundaries in polycrystalline silicon layers grown by the RAD growth process. In samples taken after a pulling length of several meters, the grain boundaries (GB's) are not characterized by exact twin relationships. Precipitates are present in GB's near the free surface.

Domaines: Articles anciens

R. Sharko, A. Gervais, C. Texier-Hervo. TEM AND EBIC INVESTIGATIONS OF POLYCRYSTALLINE SILICON SHEETS GROWN BY THE RAD GROWTH PROCESS. Journal de Physique Colloques, 1982, 43 (C1), pp.C1-129-C1-133. ⟨10.1051/jphyscol:1982118⟩. ⟨jpa-00221774⟩