INVESTIGATION OF HOT CARRIER RELAXATION WITH PICOSECOND LASER PULSES

J. Shah

Recent availability of subpicosecond lasers has enhanced the usefulness of optical techniques in the investigation of hot carrier relaxation in semiconductors by allowing us to directly probe the carrier distribution function on picosecond timescales. In this review, we will first discuss some basic theoretical concepts related to picosecond investigation of carrier relaxation. We will then review recent experimental results on hot carrier relaxation in GaAs following excitation by a subpicosecond laser. Observed relaxation rates will be compared with theory and evidence for the screening of electron-phonon interaction will be presented. Finally two recent experiments combining transport and picosecond optical techniques will be discussed to further illustrate the utility and possibilities of picosecond laser pulses in the investigation of hot carrier effects in semiconductors.

Domaines: Articles anciens

J. Shah. INVESTIGATION OF HOT CARRIER RELAXATION WITH PICOSECOND LASER PULSES. Journal de Physique Colloques, 1981, 42 (C7), pp.C7-445-C7-462. ⟨10.1051/jphyscol:1981755⟩. ⟨jpa-00221692⟩