NON STEADY STATE CARRIER TRANSPORT IN SEMICONDUCTOR, APLICATION TO THE MODELLING OF SUBMICRON DEVICES

E. Constant , B. Boittiaux

It is the purpose of this paper to study on the one hand, what new features characterise non steady state carrier transport in sub-micron seciconductor devices, and on the other to suggest and describe new methods of modelling which take these new features into account.

Domaines: Articles anciens

E. Constant, B. Boittiaux. NON STEADY STATE CARRIER TRANSPORT IN SEMICONDUCTOR, APLICATION TO THE MODELLING OF SUBMICRON DEVICES. Journal de Physique Colloques, 1981, 42 (C7), pp.C7-73-C7-94. ⟨10.1051/jphyscol:1981708⟩. ⟨jpa-00221644⟩