VOLUME AND TEMPERATURE DEPENDENCE OF THE TRANSVERSE CHARGE AND THE IONICITY OF TETRAHEDRAL SEMICONDUCTORS

D. Olego , M. Cardona , P. Vogl

The transverse charge e*T and thus the ionicity of most tetrahedral semiconductors (e. g. GaAs) decreases with decreasing volume. We have measured the volume dependence of e*T in 3C-Sic and found dln e*T/dlnv = -0.67, with a sign opposite to the usual one. These results have been interpreted with pseudopotential calculations of e*T vs. volume. Semiempirical bond orbital models, (e.g. Harrison), are not able to explain this anomalous behavior of e*T. We also report the temperature dependence of e*T and interpret it with pseudopotential theory (de*T/dt = -9.0 (5) x 10 K-1.

Domaines: Articles anciens

D. Olego, M. Cardona, P. Vogl. VOLUME AND TEMPERATURE DEPENDENCE OF THE TRANSVERSE CHARGE AND THE IONICITY OF TETRAHEDRAL SEMICONDUCTORS. Journal de Physique Colloques, 1981, 42 (C6), pp.C6-652-C6-654. ⟨10.1051/jphyscol:19816190⟩. ⟨jpa-00221274⟩