PHOTOCONDUCTIVITY IN a-Si : H AND a-SixC1-x : H, CORRELATION WITH PHOTOLUMINESCENCE RESULTS

D. Caffier , M. Le Contellec , J. Richard

Photoconductivity and photoluminescence of a-Si : H and a-SixC1-x : H films prepared by glow discharge or R.F sputtering have been studied. For a-Si : H sputtered films, the photoconductivity is greatly increased with R.F power, substrate temperature and can be compared to values obtained for glow discharge films. The addition of a low carbon content (< 10 %) does not affect the photoconductivity but a higher content greatly decreases it. In conclusion, we deduced that the existence of a high 1.2 eV photoluminescence peak is a necessary condition to obtain a good photoconductivity.

Domaines: Articles anciens

D. Caffier, M. Le Contellec, J. Richard. PHOTOCONDUCTIVITY IN a-Si : H AND a-SixC1-x : H, CORRELATION WITH PHOTOLUMINESCENCE RESULTS. Journal de Physique Colloques, 1981, 42 (C4), pp.C5-1037-C5-1040. ⟨10.1051/jphyscol:19814227⟩. ⟨jpa-00220857⟩