CHEMICAL BONDING OF ALLOY AND DOPANT ATOMS IN AMORPHOUS SILICON

G. Lucovsky

The chemical bonding environments of Si and dopant atoms in alloys of a-Si are characterized through a local electronegativity. This parameter is used as a scaling variable for empirical relations based on molecular data : the chemical shifts in the frequencies of Si-H and Si-F local vibrations, and in the binding energies of Si 2p core states.

Domaines: Articles anciens

G. Lucovsky. CHEMICAL BONDING OF ALLOY AND DOPANT ATOMS IN AMORPHOUS SILICON. Journal de Physique Colloques, 1981, 42 (C4), pp.C4-741-C4-744. ⟨10.1051/jphyscol:19814162⟩. ⟨jpa-00220786⟩