RESISTIVITY OF TmSe UNDER PRESSURE AT VERY LOW TEMPERATURE

J. Flouquet , P. Haen , F. Holtzberg , F. Lapierre , Jean Mignot , M. Ribault , R. Tournier

Resistivity measurements of a nearly stoichiometric sample up to 6 kbar and down to 25 mK are reported. For 6 kbar, the resistivity ρ rises up to 120 mΩ.cm at 30 mK whereas just above the ordering temperature TN at 4.2 K its value is 1.65 mΩ.cm. The increase of ρ is exponential with the pressure at very low temperature and linear in the vicinity of TN. Comparisons are made with the pressure dependence of the sublattice magnetization measured by neutron diffraction and with resistivity of other intermediate valence compounds.

Domaines: Articles anciens

J. Flouquet, P. Haen, F. Holtzberg, F. Lapierre, Jean Mignot, et al.. RESISTIVITY OF TmSe UNDER PRESSURE AT VERY LOW TEMPERATURE. Journal de Physique Colloques, 1980, 41 (C5), pp.C5-177-C5-180. ⟨10.1051/jphyscol:1980530⟩. ⟨jpa-00219965⟩