BARRIER PROFILES I N CLEAN AND DOPED TUNNEL JUNCTIONS

R. Floyd , W. Nelson , D. Walmsley

We have measured the conductances of clean and doped Al-I-Pb tunnel junctions and fitted them by a WKB calculation in which the barrier parameters were varied. In undoped junctions the barrier so deduced is highly asymmetric (ϕ1 ≈ 1,5 eV, ≈2 ≈ 4,5 eV). We explain the results by a concentration gradient of fractionally charged negative hydroxyl species in the barrier. A thin (~2.5 Å) high (~ 10 eV) barrier, associated with the organic layer, reproduces the measured conductances in doped junctions.

Domaines: Articles anciens

R. Floyd, W. Nelson, D. Walmsley. BARRIER PROFILES I N CLEAN AND DOPED TUNNEL JUNCTIONS. Journal de Physique Colloques, 1978, 39 (C6), pp.C6-610-C6-611. ⟨10.1051/jphyscol:19786275⟩. ⟨jpa-00217713⟩