A cell theory for stage IV work hardening of metals and semiconductors

P. Haasen

Work hardening of fcc metals and diamond structure crystals is considered in a cell model. Depending on stacking fault energy and temperature dynamic recovery can occur by cross slip or climb. The remaining dislocations cause a rehardening stage IV of two different origins and in two temperature ranges before the other dynamic recovery mechanism terminates work hardening.

Mots clés: dislocation climb; metals; semiconductors; slip; stacking faults; work hardening

Domaines: Articles anciens

P. Haasen. A cell theory for stage IV work hardening of metals and semiconductors. Journal de Physique, 1989, 50 (18), pp.2445-2453. ⟨10.1051/jphys:0198900500180244500⟩. ⟨jpa-00211073⟩