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Introducing 5-nm FinFET technology in Microwind

Abstract : This paper describes the implementation of a high performance FinFET-based 5-nm CMOS technology in Microwind. After a general presentation of the electronic market and the roadmap to 1nm technology, design rules and basic metrics for the 5-nm node are presented. Concepts related to the design of FinFET and design for manufacturing are also described. The performances of a ring oscillator, basic cells and a 6-transistor RAM memory are also analyzed.
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Contributor : Etienne Sicard Connect in order to contact the contributor
Submitted on : Tuesday, June 8, 2021 - 6:23:22 PM
Last modification on : Tuesday, October 19, 2021 - 11:17:38 PM
Long-term archiving on: : Thursday, September 9, 2021 - 8:28:14 PM


App note 5nm -v14-HAL.pdf
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  • HAL Id : hal-03254444, version 1


Etienne Sicard, Lionel Trojman. Introducing 5-nm FinFET technology in Microwind. 2021. ⟨hal-03254444⟩



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