Introducing 5-nm FinFET technology in Microwind

Etienne Sicard (1) , Lionel Trojman (2)

1 INSA Toulouse - Institut National des Sciences Appliquées - Toulouse
2 ISEP - Institut Supérieur d'Electronique de Paris

This paper describes the implementation of a high performance FinFET-based 5-nm CMOS technology in Microwind. After a general presentation of the electronic market and the roadmap to 1nm technology, design rules and basic metrics for the 5-nm node are presented. Concepts related to the design of FinFET and design for manufacturing are also described. The performances of a ring oscillator, basic cells and a 6-transistor RAM memory are also analyzed.

Mots clés: FinFET; CMOS design; 5-nm; Ring oscillator; interconnects; SRAM; logic gates

Domaines: Micro et nanotechnologies/Microélectronique

Etienne Sicard, Lionel Trojman. Introducing 5-nm FinFET technology in Microwind. 2021. ⟨hal-03254444⟩