Characterisation of pixelated CdZnTe sensors using MAXIPIX

S. Tsigaridas (1) , C. Ponchut (1) , S. Zanettini , A. Zappettini

1 ESRF - European Synchrotron Radiation Facility

In order to maximise the absoprtion efficiency of X-ray detectors for high energy photons above 20 keV, compound semiconductor sensors with high atomic number (Z) are under investigation. A promising material for future detector systems is Cadmium Zinc Telluride (CdZnTe). Redlen Technologies developed a novel CdZnTe material, optimised for applications with high photon fluxes. Such a material was used to fabricate pixelated CdZnTe sensors with a pitch of 55 μm and 110 μm. The sensors were flip-chip bonded to Timepix ASICs and their performance was characterised at the European Synchrotron Radiation Facility (ESRF) with conventional X-ray sources and monochromatic sychrotron beams using the MAXIPIX readout system. We present results concerning the uniformity, the stability and the spatial resolution of the sensors, obtained with X-ray energies up to 60 keV.

Domaines: Instrumentations et Détecteurs [physics.ins-det]

S. Tsigaridas, C. Ponchut, S. Zanettini, A. Zappettini. Characterisation of pixelated CdZnTe sensors using MAXIPIX. 21st International Workshop on Radiation Imaging Detectors, Jul 2019, Chania, Greece. pp.C12009, ⟨10.1088/1748-0221/14/12/C12009⟩. ⟨hal-02432599⟩